The PMF2000 GFET is Paragraf’s next‑generation graphene field‑effect transistor, succeeding the PV01 platform. Manufactured using Paragraf’s proprietary direct‑growth process, it features polymer‑free graphene channels for high consistency and reproducibility.
Designed for sensing and research applications, Paragraf’s graphene field-effect transistor (GFET) devices are available in both 3-channel (PMF2000) and 12-channel (PMF2002) configurations. Each device features independent graphene sensing channels arranged around in-plane gate electrodes, creating a homogeneous electric field for reliable sensor operation. An epoxy encapsulation layer enables robust liquid handling and channel-specific functionalisation, supporting multiplexed sensing, internal referencing, and advanced assay development.
Compatible with standard data acquisition systems, the PMF2000 and PMF2002 are ideal platforms for GFET sensor development, ranging from rapid proof-of-concept studies to high-channel-count sensing applications. Accessories include the Plug-in GFET (PiG) Breakout Board and GFET Discovery Kit, enabling simple integration and accelerated prototype development.
Specs
| Parameter | PMF2000 | PMF2002 |
|---|---|---|
| Number of GFET channels | 3 | 12 |
| Dirac Point (mV) | 700 ± 150 | <800 mV. Supplied ranges can be tailored for your application. Batch reports are available upon request. |
| Transconductance (mS·sq/V) | Typical 0.8, Min 0.5 | Typical 0.8, Min 0.5 |
| Channel resistance (kΩ) | 1 to 3.5 | 1 to 3.5 |
| Channel dimensions (µm) | 100 × 100 | 100 × 100 |