The PMF2000 GFET is Paragraf’s next‑generation graphene field‑effect transistor, succeeding the PV01 platform. Manufactured using Paragraf’s proprietary direct‑growth process, it features polymer‑free graphene channels for high consistency and reproducibility.
Designed for sensing and research applications, the device includes three independent graphene channels arranged around an in‑plane gate electrode for a homogeneous electric field. An epoxy encapsulation layer enables reliable liquid handling and channel‑specific functionalisation, supporting multiplexed sensing and internal referencing.
Compatible with standard data acquisition systems, the PMF2000 is ideal for advanced GFET sensor development. Accessories include the Plug-in Graphene (PiG) Breakout Board and GFET Discovery Kit – enabling simple and rapid proof-of-concept and design prototyping.
Specs
No of GFET channels: 3
Dirac Point (mV): 700mV ±150mV
Transconductance (mS•sq/V): Typically 0.8, min 0.5
Channel resistance (kOhm): max 3.5, min 1
Channel dimensions (µm): 100 x 100
