The Paragraf GFET-PV01 is an electrolyte-gated FET (field-effect transistor) mass-produced with a proprietary technique to deposit graphene directly on the device substrate. This produces a graphene channel free from polymers that delivers a homogeneous electric field during operation for versatile and repeatable molecule sensing.
The GFET-PV01 is produced for developing sensing applications with an epoxy encapsulation layer allowing consistent liquid handling and alignment during sensor modification and test. In addition, the three channels are positioned for reliable manual or automated functionalisation of each graphene channel for multiplexing and/or internal referencing. The device is compatible with readily available data acquisition systems.
Specs
No of GFET channels: 3
Dirac Point (mV): 500mV ±200mV
Transconductance (mS•sq/V): > 1.5
Channel resistance (kOhm): < 3
Channel dimensions (µm): 100 x 100
